IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= -10 V; I

4

5

S

C

iss

3400

pF

C

oss

V

GS

= 0 V, V

450

pF

C

rss

175

pF

t

d(on)

33

ns

t

r

V

GS

= -10 V, V

0.5 V

27

ns

t

d(off)

R

35

ns

t

f

35

ns

Q

g(on)

130

nC

Q

gs

V

GS

= -10 V, V

32

nC

Q

gd

64

nC

R

thJC

0.7

K/W

R

thCS

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

7P50

-7

A

8P50

-8

A

I

SM

Repetitive; pulse width limited by T

JM

7P50

-28

A

8P50

-32

A

V

SD

I

-3

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

400

ns

IXTH 7P50

IXTH 8P50

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-247 AD Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3