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LMC8101MM 数据表(PDF) 4 Page - National Semiconductor (TI) |
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LMC8101MM 数据表(HTML) 4 Page - National Semiconductor (TI) |
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4 / 15 page ![]() 2.7V Electrical Characteristics (Continued) Unless otherwise specified, all limits guaranteed for T J = 25˚C, V + = 2.7V, V− = 0V, V CM = VO = V +/2 and R L > 1MΩ to V +/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Typ (Note 5) Limit (Note 6) Units V O Output Swing High R L = 2kΩ to V +/2 V ID = 100mV 2.67 2.64 2.62 V min R L = 10kΩ to V +/2 V ID = 100mV 2.69 2.68 2.67 V min Output Swing Low R L = 2kΩ to V +/2 V ID = −100mV 32 100 150 mV max R L = 10kΩ to V +/2 V ID = −100mV 10 30 70 mV max I SC Output Short Circuit Current Sourcing to V +/2 V ID = 100mV (Note 11) 20 14 6 mA min Sinking to V +/2 V ID = −100mV (Note 11) 10 5 4 mA min I S Supply Current No load, normal operation 0.70 1.0 1.2 mA max Shutdown mode 0.001 1 µA max T on Shutdown Turn-on time (Note 9) 10 15 µs T off Shutdown Turn-off time (Note 9) 1 µs I in ″SL″ and ″SD″ Input Current ±1 ±64 pA max SR Slew Rate (Note 8) A V = +1, RL = 10kΩ to V +/2 V I= 1VPP 1 0.8 V/µs min f u Unity Gain-Bandwidth V I = 10mV, RL = 2kΩ to V +/2 750 KHz GBW Gain Bandwidth Product f = 100KHz 1 MHz e n Input-Referred Voltage Noise f = 10KHz, R S = 50Ω 36 i n Input-Referred Current Noise f = 10KHz 1.5 THD Total Harmonic Distortion f = 1KHz, AV = +1, V O = 2.2Vpp, R L = 600Ω to V +/2 0.18 % +/−5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C, V + =5V, V− = −5V, V CM = VO = 0V, and RL > 1MΩ to gnd. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Typ (Note 5) Limit (Note 6) Units V OS Input Offset Voltage ±0.7 ±5 ±7 mV max TCV os Input Offset Voltage Average Drift 4 µV/˚C I B Input Bias Current (Note 7) ±1 ±64 pA max I OS Input Offset Current 0.5 32 pA max R in CM Input Common Mode Resistance 10 G Ω C in CM Input Common Mode Capacitance 10 pF CMRR Common-Mode Rejection Ratio −5V < = V CM < = 5V 87 70 67 dB min www.national.com 4 |
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