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MSK3003 数据表(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK3003 数据表(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 5 page  1 2 3 4 Drain-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On Resistance Drain-Source On Resistance Forward Transconductance Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Drain-Source Breakdown Voltage Gate-Source Leakage Current N-Channel (Q2,Q4,Q6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance P-CHANNEL (Q1,Q3,Q5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BODY DIODE 71mJ 96mJ +175°C MAX -55°C to +150°C -55°C to +125°C 300°C MAX Single Pulse Avalanche Energy (Q2,Q4,Q6) (Q1,Q3,Q5) Junction Temperature Storage Temperature Case Operating Temperature Range Lead Temperature Range (10 Seconds) Drain to Source Voltage Drain to Gate Voltage (RGS=1MΩ) Gate to Source Voltage (Continuous) Continuous Current Pulsed Current Thermal Resistance (Junction to Case) ABSOLUTE MAXIMUM RATINGS VDSS VDGDR VGS ID IDM RTH-JC TJ TST TC TLD 55V MAX 55V MAX ±20V MAX 10A MAX 25A MAX 7.9°C/W VGS=0 ID=0.25mA (All Transistors) VDS=55V VGS=0V (Q2,Q4,Q6) VDS=-55V VGS=0V (Q1,Q3,Q5) VGS=±20V VDS=0 (All Transistors) VDS=VGS ID=250µA (Q2,Q4,Q6) VDS=VGS ID=250µA (Q1,Q3,Q5) VGS=10V ID=10A (Q2,Q4,Q6) VGS=-10V ID=-7.2A (Q1,Q3,Q5) VGS=10V ID=10A (Q2,Q4,Q6) VGS=10V ID=-7.2A (Q1,Q3,Q5) VDS=25V ID=10A (Q2,Q4,Q6) VDS=-25V ID=-7.2A (Q1,Q3,Q5) ID=10A VDS=44V VGS=10V VDD=28V ID=10A RG=24Ω RD=2.6Ω VGS=0V VDS=25V f=1MHz ID=-7.2A VDS=-44V VGS=-10V VDD=-28V ID=-7.2A RG=24Ω RD=3.7Ω VGS=0V VDS=-25V f=1MHz IS=10A VGS=0V (Q2,Q4,Q6) IS=-7.2A VGS=0V (Q1,Q3,Q5) IS=10A di/dt=100A/µS (Q2,Q4,Q6) IS=-7.2A di/dt=100A/µS (Q1,Q3,Q5) IS=10A di/dt=100A/µS (Q2,Q4,Q6) IS=-7.2A di/dt=100A/µS (Q1,Q3,Q5) Parameter Units MSK3003 Test Conditions V µA µA nA V V Ω Ω Ω Ω S S nC nC nC nS nS nS nS pF pF pF nC nC nC nS nS nS nS pF pF pF V V nS nS µC µC Min. 55 - - - 2.0 -2.0 - - - - 4.5 2.5 - - - - - - - - - - - - - - - - - - - - - - - - - - Typ. - - - - - - - - - - - - - - - 4.9 34 19 27 370 140 65 - - - 13 55 23 37 350 170 92 1.3 -1.6 56 47 0.12 0.084 Max. - 25 -25 ±100 4.5 -4.5 0.15 0.28 0.07 0.175 - - 20 5.3 7.6 - - - - - - - 19 5.1 10 - - - - - - - - - 83 71 0.18 0.13 ELECTRICAL SPECIFICATIONS 2 1 3 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 NOTES: This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. Resistance as seen at package pins. Resistance for die only; use for thermal calculations. TA=25°C unless otherwise specified. 4 Rev. G 6/00 2 |
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