BUL59 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.39

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = rated VCES

Tj = 125

200

500

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 9 V

100

µA

VCEO(sus)

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 5 A

IB = 1 A

0.18

0.5

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 5 A

IB = 1 A

1.2

1.6

VCEW

Maximum Collector

Emitter Voltage

Without Snubber

IC = 15 A

RBB = 0

Ω

VBB = -2.5 V

L = 50

µH

tp = 10

µs

450

hFE

∗

DC Current Gain

IC = 2 A

VCE = 5 V

IC = 5 A

VCE = 5 V

IC = 8 A

VCE = 10 V

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IBon = 0.4 A

VBE(off) = -5 V

RBB = 0

Ω

VCC = 250 V

L = 200

µH

0.8

0.15

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL59

2/6

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