M29F080D datasheet(28/36 Pages) STMICROELECTRONICS

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M29F080D

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Table 19. CFI Query System Interface Information

Note: 1. Not supported in the CFI

Address

Data

Description

Value

1Bh

45h

VCC Logic Supply Minimum Program/Erase voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

4.5V

1Ch

55h

VCC Logic Supply Maximum Program/Erase voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

5.5V

1Dh

00h

VPP [Programming] Supply Minimum Program/Erase voltage

00h not supported

1Eh

00h

VPP [Programming] Supply Maximum Program/Erase voltage

00h not supported

1Fh

04h

Typical timeout per single byte program = 2n µs

16µs

20h

00h

Typical timeout for minimum size write buffer program = 2n µs

21h

0Ah

Typical timeout per individual block erase = 2n ms

22h

00h

Typical timeout for full chip erase = 2n ms

see note (1)

23h

04h

Maximum timeout for byte program = 2n times typical

256µs

24h

00h

Maximum timeout for write buffer program = 2n times typical

25h

03h

Maximum timeout per individual block erase = 2n times typical

26h

00h

Maximum timeout for chip erase = 2n times typical

see note (1)

M29F080D 数据表(PDF) 28 Page - STMicroelectronics

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