HSMS-282Z datasheet(2/5 Pages) AVAGO

部件名	HSMS-282Z

功能描述	RF Schottky Barrier Diodes In Surface Mount SOD-323 Package

PDF	5 Pages

Scroll/Zoom	100%

制造商	AVAGO [AVAGO TECHNOLOGIES LIMITED]

网页	http://www.avagotech.com

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2 / 5 page

Table 2. Electrical Specifications at Tc = +250C

Typical Performance Curves at Tc = +25°C

Figure 1. Forward Current vs. Forward Voltage

Figure 2. Reverse Current vs. Reverse Voltage

Minimum

Breakdown

Voltage

VBR (V)

Maximum

Forward

Voltage

VF (mV)

Maximum

Forward

Voltage

VF (V)

Maximum

Reverse

Leakage

IR (nA)

Minimum

Capacitance

CT (pF)

Typical

Dynamic

Resistance

RD (Ohm)

340

0.5

100

1.0

Test Conditions

VR = VBR

Measure IR ≤100uA

IF = 1mA

IF = 10mA

VR = 1V

VR = 0 V

f = 1 MHz

IF = 5mA

0.01

0.10

1.00

10.00

100.00

0.00

0.10

0.20

0.30

0.40

0.50

FORWARD VOLTAGE (V)

125 ˚C

75 ˚C 25 ˚C

-25 ˚C

VR - REVERSE VOLTAGE (V)

1000

100

100,000

10,000

TA = +125 ˚C

TA = +75 ˚C

TA = +25 ˚C

Figure 3. Total Capacitance vs. Reverse Bias

Figure 4. Dynamic Resistance vs. Forward Current

0.2

0.4

0.6

0.8

VR -REVERSE VOLTAGE (V)

100

1000

100

FORWARD CURRENT (mA)

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