STGD3NB60F datasheet(2/14 Pages) STMICROELECTRONICS

2 / 14 page

STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD

2/14

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) For “D” version only

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)

MAIN PARAMETERS

Symbol

Parameter

Value

Unit

TO-220/D2PAK

TO-220FP

DPAK

VCES

Collector-Emitter Voltage (VGS =0)

600

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC =25°C

Collector Current (continuous) at TC =100°C

ICM ( )

Collector Current (pulsed)

If (1)

Forward Current

Ifm (1)

Forward Current Pulsed

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.55

0.2

0.47

W/°C

VISO

Insulation Withstand Voltage A.C.

2500

Tstg

Storage Temperature

– 55 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220/D2PAK

TO-220FP

DPAK

Rthj-case

Thermal Resistance Junction-case Max

1.8

2.1

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Rthc-h

Thermal Resistance Case-heatsink Typ

0.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

ICES

Collector cut-off

(VGE =0)

VCE = Max Rating, TC = 25°C

VCE = Max Rating, TC = 125°C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =±20V,VCE = 0

±100

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250 µA

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE =15 V,IC =3 A

VGE =15 V,IC =3 A, Tj =125°C

1.9

1.6

2.4

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