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STGF3NB60FD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGF3NB60FD
功能描述  N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH™ IGBT
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF3NB60FD 数据表(HTML) 3 Page - STMicroelectronics

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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD
SWITCHING PARAMETERS
COLLECTOR-EMITTER DIODE (“D” VERSION)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25V,Ic =3A
2S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE =25V,f= 1MHz,VGE = 0
230
33
6
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V, IC =3A,
VGE =15 V
16
1.5
8
20
nC
nC
nC
td(on)
tr
Turn-on Delay Time
Rise Time
VCC = 480 V, IC =3 A
RG =10Ω,VGE =15 V
12.5
4
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC =3 ARG=10Ω
VGE = 15 V,Tj = 125°C
840
31
A/µs
µJ
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Vcc =480 V, IC =3 A,
RGE =10 Ω ,VGE =15 V
Tj = 25 °C
220
60
105
150
125
149
ns
ns
ns
ns
µJ
µJ
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Vcc =480 V, IC =3 A,
RGE =10 Ω ,VGE =15 V
Tj = 125 °C
490
174
230
305
295
326
ns
ns
ns
ns
µJ
µJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.31
0.95
1.8
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If =3A ,VR =35 V,
Tj =125°C, di/dt = 100 A/
µs
45
70
2.7
ns
nC
A



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