STPS30150C

3/7

0

25

50

75

100

125

150

175

200

225

1.E-03

1.E-02

1.E-01

1.E+00

t

δ=0.5

I(A)

M

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

Fig. 5-1: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode) (TO-220AB, TO-247, D

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

th(j-c)

t(s)

p

Fig. 6-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

(TO-220AB, TO-247, D

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

1.E-03

1.E-02

1.E-01

1.E+00

t

δ=0.5

I(A)

M

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220FPAB).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

th(j-c)

t (s)

p

Fig. 6-2: Relative variation of thermal impedance

junction

to

case

versus

pulse

duration.

(TO-220FPAB)

0

0.2

0.4

0.6

0.8

1

1.2

0

25

50

75

100

125

150

T (°C)

j

P(t )

P

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t(µs)

p

P(t )

P

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.