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LP2902 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LP2902
功能描述  Micropower Quad Operational Amplifier
PDF  10 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LP2902 数据表(HTML) 2 Page - National Semiconductor (TI)

  LP2902 Datasheet HTML 1Page - National Semiconductor (TI) LP2902 Datasheet HTML 2Page - National Semiconductor (TI) LP2902 Datasheet HTML 3Page - National Semiconductor (TI) LP2902 Datasheet HTML 4Page - National Semiconductor (TI) LP2902 Datasheet HTML 5Page - National Semiconductor (TI) LP2902 Datasheet HTML 6Page - National Semiconductor (TI) LP2902 Datasheet HTML 7Page - National Semiconductor (TI) LP2902 Datasheet HTML 8Page - National Semiconductor (TI) LP2902 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
32V or ± 16V
LP2902
26V or ± 13V
Differential Input Voltage
32V
LP2902
26V
Input Voltage (Note 2)
−0.3V to 32V
LP2902
−0.3V to 26V
Output Short-Circuit to GND
Continuous
(One Amplifier) (Note 3)
V
+
≤ 15V and T
A = 25˚C
ESD Susceptibility (Note 10)
±500V
Operating Conditions
Package
NM
Power Dissipation
500 mW
500 mW
(Note 4)
T
j Max
150˚C
150˚C
θ
ja
90˚C/W
140˚C/W
Operating Temp. Range
(Note 5)
(Note 5)
Storage Temp. Range
−65˚C
≤ T ≤ 150˚C
Soldering
Information (10 sec.)
300˚C
260˚C
Vapor Phase (60 sec.)
215˚C
Infrared (15 sec.)
220˚C
Electrical Characteristics (Note 6)
LP2902 (Note 9)
LP324
Symbol
Parameter
Conditions
Tested
Design
Tested
Design
Units
Typ
Limit
Limit
Typ
Limit
Limit
Limits
(Note 7)
(Note 8)
(Note 7)
(Note 8)
Vos
Input Offset
2
4
10
24
9
mV
Voltage
(Max)
Ib
Input Bias
2
20
40
210
20
nA
Current
(Max)
Ios
Input Offset
0.5
4
8
0.2
2
4
nA
Current
(Max)
Avol
Voltage
RL = 10k
70
40
30
100
50
40
V/mV
Gain
to GND
(Min)
V
+ = 30V
CMRR
Common
V
+ = 30V
90
80
75
90
80
75
dB
Mode Rej.
0V
≤ V
cm
(Min)
Ratio
Vcm < V
+− 1.5
PSRR
Power
V
+ = 5V to 30V
90
80
75
90
80
75
dB
Supply Rej.
(Min)
Ratio
Is
Supply
RL =
85
150
250
85
150
250
µA
Current
(Max)
Vo
Output
IL = 350 µA
3.6
3.4
V
+−1.9V
3.6
3.4
V
+−1.9V
V
Voltage
to GND.
(Min)
Swing
Vcm = 0V
IL = 350 µA
0.7
0.8
1.0
0.7
0.8
1.0
V
to V
+
(Max)
Vcm = 0V
Iout
Output
Vo = 3V
10
7
4
10
7
4
mA
Source
Source
Vin (diff) = 1V
(Min)
Current
Iout
Output
Vo = 1.5V
5
4
3
54
3
mA
Sink
Sink
Vin (diff) = 1V
(Min)
Current
Iout
Output
Vo = 1.5V
4
2
1
42
1
mA
Sink
Sink
Vcm = 0V
(Min)
Current
Isource
Output
Vin (diff) = 1V
20
25
35
20
25
35
mA
Short to GND
35
35
(Max)
Isink
Output
Vin (diff) = 1V
15
30
45
15
30
45
mA
Short to V
+
(Max)
Vos
10
10
µV/C˚
www.national.com
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