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LP365 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LP365
功能描述  Micropower Programmable Quad Comparator
PDF  10 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LP365 数据表(HTML) 3 Page - National Semiconductor (TI)

  LP365 Datasheet HTML 1Page - National Semiconductor (TI) LP365 Datasheet HTML 2Page - National Semiconductor (TI) LP365 Datasheet HTML 3Page - National Semiconductor (TI) LP365 Datasheet HTML 4Page - National Semiconductor (TI) LP365 Datasheet HTML 5Page - National Semiconductor (TI) LP365 Datasheet HTML 6Page - National Semiconductor (TI) LP365 Datasheet HTML 7Page - National Semiconductor (TI) LP365 Datasheet HTML 8Page - National Semiconductor (TI) LP365 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Electrical Characteristics (Continued) (Note 8) High power VSeg15V ISETe100 mA
LP365A
LP365
Symbol
Parameter
Conditions
Tested
Design
Tested
Design
Units
Typ
Limit
Limit
Typ
Limit
Limit
(Limit)
(Note 5)
(Note 6)
(Note 5)
(Note 6)
VOS
Input Offset
VCMe0V
13
6
36
9
mV
Voltage
RSe100
(Max)
IOS
Input Offset
VCMe0V
5
50
100
10
90
200
nA
Current
LP265
10
90
500
(Max)
IB
Input Bias
VCMe0V
60
200
500
80
300
500
nA
Current
LP265
80
300
800
(Max)
AVOL
Large Signal
RLe15k
500
100
100
500
100
100
VmV
Voltage Gain
(Min)
VCM
Input Common-
b
15
b
15
b
15
b
15
V
Mode Voltage
(Max)
Range
13
13
13
13
V
(Min)
CMRR
Common-Mode
b
15VsVCM
85
75
70
80
75
70
dB
Rejection Ratio
s
13V
(Min)
PSRR
Supply Voltage
g
10VsVS
80
70
70
75
70
70
dB
Rejection Ratio
s g
15V
(Min)
IS
Supply Current
All Inputse0V
26
3
33
28
35
37
mA
RLe % LP265
28
35
43
(Max)
VOH
Output Voltage
VCe5V
V
High
VEe0V
49
45
49
45
(Min)
RLe100k
VOL
Output Voltage
VEe0V
04
04
04
04
V
Low
(Max)
ISINK
Output Sink
VEe0V
10
8
55
75
6
4
mA
Current
VOe04V
(Min)
ILEAK
Output Leakage
VCe15V
550
5000
550
5000
nA
Current
VEeb15V
(Max)
tR
Response Time
VCCe5V
VEe0V
RLe5k
10
10
m
s
CLe10 pF
(Note 7)
Note 1
The input voltage is not allowed to go 03V above Va or b03V below Vb as this will turn on a parasitic transistor causing large currents to flow through
the device
Note 2
Short circuits from the output to Va may cause excessive heating and eventual destruction The current in the output leads and the VE lead should not be
allowed to exceed 30 mA The output should not be shorted to Vb if VEs(Vb) a 7V
Note 3
For operating at elevated temperatures these devices must be derated based on a thermal resistance of ijA and Tj max TjeTAaijAPD
Note 4 Boldface numbers apply at temperature extremes
All other numbers apply at TAeTje25 C Va e5V Vbe0V ISETe10 mA RLe100k and
VCe5V as shown in the Typical Connection diagram
Note 5
Guaranteed and 100% production tested
Note 6
Guaranteed (but not 100% production tested) over the operating temperature and supply voltage ranges These limits are not used to calculate out-going
quality levels
Note 7
The response time specified is for a 100 mV input step with 5 mV overdrive
Note 8 Boldface numbers apply at temperature extremes
All other numbers apply at TAeTje25 C Vaea 15V Vbeb15V ISETe100 mA RLe100k and
VCe5V as shown in the Typical Connection diagram
Note 9
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices
Note 10
Human body model 15 kX in series with 100 pF
3



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