ULQ2001 datasheet(3/7 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS

(TJ = –40 to 105

oC for DIP16 unless otherwise specified)

(TJ = 25 to 105

oC for SO16 unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Fig.

ICEX

Output Leakage Current

VCE = 50V

TJ = 105

°C, VCE = 50V

TJ = 105

°C

for ULQ2002A

VCE = 50V, Vi = 6V

for ULQ2004A

VCE = 50V, Vi = 1V

100

500

µA

VCE(sat)

Collector-emitter

Saturation Voltage

IC = 100mA, IB = 250

µA

IC = 200mA, IB = 350

µA

IC = 350mA, IB = 500

µA

0.9

1.1

1.3

1.1

1.3

1.6

Ii(on)

Input Current

for ULQ2002A

Vi = 17V

for ULQ2003A

Vi = 3.85V

for ULQ2004A

Vi = 5V

Vi = 12V

0.82

0.93

0.35

1.25

1.35

0.5

1.45

Ii(off)

Input Current

TJ = 105

°C, IC = 500µA50

µA4

Vi(on)

Input Voltage

for ULQ2002A

VCE = 2V, IC = 300mA

for ULQ2003A

VCE = 2V, IC = 200mA

VCE = 2V, IC = 250mA

VCE = 2V, IC = 300mA

for ULQ2004A

VCE = 2V, IC = 125mA

VCE = 2V, IC = 200mA

VCE = 2V, IC = 275mA

VCE = 2V, IC = 350mA

2.4

2.7

hFE

DC Forward Current Gain

for ULQ2001A

VCE = 2V, IC = 350mA

1000

–

Input Capacitance

25 (*)

–

tPLH

Turn-on Delay Time

0.5 Vi to 0.5 Vo

0.25

1 (*)

µs–

tPHL

Turn-off Delay Time

0.5 Vi to 0.5 Vo

0.25

1 (*)

µs–

Clamp Diode Leakage

Current

VR = 50V

TJ = 105

°C, VR = 50V

100

µA

Clamp Diode Forward

Voltage

IF = 350mA

1.7

(*) Guaranteed by design

ULQ2001A - ULQ2002A - ULQ2003A - ULQ2004A

3/7

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