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LP2954IM 数据表(PDF) 4 Page - National Semiconductor (TI) |
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LP2954IM 数据表(HTML) 4 Page - National Semiconductor (TI) |
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4 / 13 page ![]() Electrical Characteristics (Continued) Limits in standard typeface are for T J = 25˚C, bold typeface applies over the −40˚C to +125˚C temperature range. Limits are guaranteed by production testing or correlation techniques using standard Statistical Quality Control (SQC) methods. Un- less otherwise noted: V IN = 6V, IL = 1 mA, CL = 2.2 µF. Symbol Parameter Conditions Typical 2954AI 2954I Units Min Max Min Max Additional Specifications for the Adjustable Device (LP2954AIM and LP2954IM) V REF Reference Voltage (Note 10) 1.230 1.215 1.205 1.245 1.255 1.205 1.190 1.255 1.270 V ∆V REF/ V REF Reference Voltage Line Regulation V IN=2.5V to VO(NOM)+1V 0.03 0.1 0.2 V IN=2.5V to VO(NOM)+1V to 30V (Note 11) 0.2 0.4 ∆V REF/∆T Reference Voltage Temperature Coefficient (Note 3) 20 ppm/˚C I B(FB) Feedback Pin Bias Current 20 40 60 40 60 nA I GND Ground Pin Current at Shutdown (Note 6) V SHUTDOWN≤1.1V 105 140 140 µA I O(SINK) Output ″OFF″ Pulldown Current (Note 12) 30 20 30 20 mA Dropout Detection Comparator I OH Output ″HIGH″ Leakage Current V OH=30V 0.01 1 2 1 2 µA V OL Output ″LOW″ Voltage V IN=VO(NOM)−0.5V I O(COMP)=400µA 150 250 400 250 400 mV V THR(MAX) Upper Threshold Voltage (Note 13) −60 −80 −95 −35 −25 −80 −95 −35 −25 mV V THR(MIN) Lower Threshold Voltage (Note 13) −85 −110 −160 −55 −40 −110 −160 −55 −40 mV HYST Hysteresis (Note 13) 15 mV Shutdown Input V OS Input Offset Voltage (Referred to V REF) ±3 −7.5 −10 7.5 10 −7.5 −10 7.5 10 mV HYST Hysteresis 6 mV I B Input Bias Current V IN(S/D)=0V to 5V 10 −30 −50 30 50 −30 −50 30 50 nA Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de- vice outside of its rated operating conditions. Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ (MAX), the junction-to-ambient thermal resistance, θJ-A, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: . Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. The junction-to-ambient thermal resistance of the TO-220 (without heatsink) is 60˚C/W, 73˚C/W for the TO-263, and 160˚C/W for the SO-8. If the TO-263 package is used, the thermal re- sistance can be reduced by increasing the P.C. board copper area thermally connected to the package: Using 0.5 square inches of copper area, θJA is 50˚C/W; with 1 square inch of copper area, θJA is 37˚C/W; and with 1.6 or more square inches of copper area, θJA is 32˚C/W. The junction-to-case thermal resistance is 3˚C/W. If an external heatsink is used, the effective junction-to-ambient thermal resistance is the sum of the junction-to-case resistance (3˚C/W), the specified thermal re- sistance of the heatsink selected, and the thermal resistance of the interface between the heatsink and the LP2954. Some typical values are listed for interface ma- terials used with TO-220: www.national.com 4 |
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