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LP2954IM 数据表(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LP2954IM
功能描述  5V and Adjustable Micropower Low-Dropout Voltage Regulators
PDF  13 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LP2954IM 数据表(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
Limits in standard typeface are for T
J = 25˚C, bold typeface applies over the −40˚C to +125˚C temperature range. Limits
are guaranteed by production testing or correlation techniques using standard Statistical Quality Control (SQC) methods. Un-
less otherwise noted: V
IN = 6V, IL = 1 mA, CL = 2.2 µF.
Symbol
Parameter
Conditions
Typical
2954AI
2954I
Units
Min
Max
Min
Max
Additional Specifications for the Adjustable Device (LP2954AIM and LP2954IM)
V
REF
Reference Voltage
(Note 10)
1.230
1.215
1.205
1.245
1.255
1.205
1.190
1.255
1.270
V
∆V
REF/
V
REF
Reference Voltage
Line Regulation
V
IN=2.5V to
VO(NOM)+1V
0.03
0.1
0.2
V
IN=2.5V to
VO(NOM)+1V to 30V
(Note 11)
0.2
0.4
∆V
REF/∆T
Reference Voltage
Temperature
Coefficient
(Note 3)
20
ppm/˚C
I
B(FB)
Feedback Pin Bias
Current
20
40
60
40
60
nA
I
GND
Ground Pin Current
at Shutdown (Note
6)
V
SHUTDOWN≤1.1V
105
140
140
µA
I
O(SINK)
Output
″OFF″
Pulldown Current
(Note 12)
30
20
30
20
mA
Dropout Detection Comparator
I
OH
Output
″HIGH″
Leakage Current
V
OH=30V
0.01
1
2
1
2
µA
V
OL
Output
″LOW″
Voltage
V
IN=VO(NOM)−0.5V
I
O(COMP)=400µA
150
250
400
250
400
mV
V
THR(MAX)
Upper Threshold
Voltage
(Note 13)
−60
−80
−95
−35
−25
−80
−95
−35
−25
mV
V
THR(MIN)
Lower Threshold
Voltage
(Note 13)
−85
−110
−160
−55
−40
−110
−160
−55
−40
mV
HYST
Hysteresis
(Note 13)
15
mV
Shutdown Input
V
OS
Input Offset Voltage
(Referred to V
REF)
±3
−7.5
−10
7.5
10
−7.5
−10
7.5
10
mV
HYST
Hysteresis
6
mV
I
B
Input Bias Current
V
IN(S/D)=0V to 5V
10
−30
−50
30
50
−30
−50
30
50
nA
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de-
vice outside of its rated operating conditions.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ (MAX), the junction-to-ambient thermal resistance, θJ-A,
and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using:
.
Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. The junction-to-ambient
thermal resistance of the TO-220 (without heatsink) is 60˚C/W, 73˚C/W for the TO-263, and 160˚C/W for the SO-8. If the TO-263 package is used, the thermal re-
sistance can be reduced by increasing the P.C. board copper area thermally connected to the package: Using 0.5 square inches of copper area,
θJA is 50˚C/W; with
1 square inch of copper area,
θJA is 37˚C/W; and with 1.6 or more square inches of copper area, θJA is 32˚C/W. The junction-to-case thermal resistance is 3˚C/W.
If an external heatsink is used, the effective junction-to-ambient thermal resistance is the sum of the junction-to-case resistance (3˚C/W), the specified thermal re-
sistance of the heatsink selected, and the thermal resistance of the interface between the heatsink and the LP2954. Some typical values are listed for interface ma-
terials used with TO-220:
www.national.com
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