PB50 datasheet(2/4 Pages) APEX

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APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739

PB50

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

S to –VS

200V

OUTPUT CURRENT, within SOA

POWER DISSIPATION, internal at T

C = 25°C

35W

INPUT VOLTAGE, referred to common

±15V

TEMPERATURE, pin solder—10 sec max

300°C

TEMPERATURE, junction1

150°C

TEMPERATURE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

SPECIFICATIONS

PARAMETER

TEST CONDITIONS2

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

±.75

±1.75

OFFSET VOLTAGE, vs. temperature

Full temperature range

–4.5

–7

mV/°C

INPUT IMPEDANCE, DC

kΩ

INPUT CAPACITANCE

CLOSED LOOP GAIN RANGE

V/V

GAIN ACCURACY, internal Rg, Rf

V = 3

±10

±15

GAIN ACCURACY, external Rf

V = 10

±15

±25

PHASE SHIFT

F = 10kHz, AV

CL = 10, CC = 22pF

F = 200kHz, AV

CL = 10, CC = 22pF

OUTPUT

VOLTAGE SWING

Io = 2A

S–11

S –9

VOLTAGE SWING

Io = 1A

S–10

S –7

VOLTAGE SWING

Io = .1A

S–8

S –5

CURRENT, continuous

SLEW RATE

Full temperature range

100

V/µs

CAPACITIVE LOAD

Full temperature range

2200

SETTLING TIME to .1%

L = 100Ω, 2V step

µs

POWER BANDWIDTH

C = 100Vpp

160

320

kHz

SMALL SIGNAL BANDWIDTH

C = 22pF, AV = 25, Vcc = ±100

100

kHz

SMALL SIGNAL BANDWIDTH

C = 22pF, AV = 3, Vcc = ±30

MHz

POWER SUPPLY

VOLTAGE, ±V

Full temperature range

±305

±60

±100

CURRENT, quiescent

S = ±30

S = ±60

S = ±100

THERMAL

RESISTANCE, AC junction to case4

Full temp. range, F > 60Hz

1.8

2.0

°C/W

RESISTANCE, DC junction to case

Full temp. range, F < 60Hz

3.2

3.5

°C/W

RESISTANCE, junction to air

Full temperature range

°C/W

TEMPERATURE RANGE, case

Meets full range speciﬁcations

–25

°C

NOTES: 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF (Mean Time to Failure).

2. The power supply voltage speciﬁed under typical (TYP) applies, T

C = 25°C unless otherwise noted.

3. +V

S and –VS denote the positive and negative supply rail respectively.

4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

5. +V

S must be at least 15V above COM, –VS must be at least 30V below COM.

The PB50 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION

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