SIB417EDK datasheet(3/9 Pages) VISHAY

3 / 9 page

Document Number: 68699

S09-1500-Rev. B, 10-Aug-09

www.vishay.com

Vishay Siliconix

SiB417EDK

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

VDS - Drain-to-Source Voltage (V)

VGS =5 V thru 2.5 V

VGS =1.5 V

VGS =1 V

VGS =2 V

0.0

0.1

0.2

0.3

0.4

369

ID - Drain Current (A)

VGS =1.8V

VGS =2.5 V

VGS =4.5 V

VGS =1.5 V

VGS =1.2 V

024

Qg - Total Gate Charge (nC)

VDS =6.4 V

VDS =4 V

ID =5.8 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.5

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC =- 55 °C

Crss

200

400

600

800

1000

024

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

VGS = - 2.5 V,ID =- 5 A

VGS = - 4.5 V,ID =- 5.8 A

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