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AM29F160D 数据表(PDF) 35 Page - Advanced Micro Devices |
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AM29F160D 数据表(HTML) 35 Page - Advanced Micro Devices |
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35 / 46 page ![]() 34 Am29F160D AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Speed Options JEDEC Std. Description 75 90 120 Unit tAVAV tWC Write Cycle Time (Note 1) Min 70 90 120 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 45 50 ns tDVWH tDS Data Setup Time Min 30 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 45 50 ns tWHWL tWPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 7 µs Word Typ 12 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Min 30 35 50 ns |
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