AM29LV256M datasheet(69/70 Pages) AMD

69 / 70 page

September 15, 2003

Am29LV256M

D A T A SH EET

Revision C+1 (May 28, 2003)

Global

Converted to full datasheet version.

Modified SecSi Sector Flash Memory Region section

to include ESN references.

Erase and Programming Performance

Input values into table that were previously TBD.

Modified notes.

CMOS Compatible

Corrected typos in table.

Erase and Program Operations and Alternate CE#

Controlled Erase and Program Operations

Changed the typical for the Accelerated Effective

Write Buffer Program Operation for Byte and Word to

6.25 and 12.5.

Revision C+2 (June 11, 2003)

Global

Modified speed grades available.

Revision C+3 (September 15, 2003)

Ordering Information

Added OPN note for ESN feature.

Tables 11 & 12 Command Definitions

Changed definition BA to XXX for Program/Erase Sus-

pend (Note 16) and for Program/Erase Resume (Note

17).

Program Suspend/Program Resume Command

Sequence

Removed - program suspended sector is required

when writing this command.

AC Characteristics - Hardware Reset

Added information for t

RB.

AC Characteristics - Erase and Program

Operations

Added information for t

BUSY.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

AM29LV256M 数据表(PDF) 69 Page - Advanced Micro Devices

AM29LV256M 数据表(HTML) 69 Page - Advanced Micro Devices

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