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BAT960 数据表(PDF) 4 Page - NXP Semiconductors |
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BAT960 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page ![]() 2003 May 01 4 Philips Semiconductors Product specification Schottky barrier diode BAT960 GRAPHICAL DATA handbook, halfpage 0.6 0.2 0 0.4 VF (V) IF (mA) 103 102 10 1 10−1 MHC311 (1) (2) (3) Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 25 0 510 15 IR ( µA) 20 VR (V) 105 104 103 102 10 1 MHC312 (1) (2) (3) Fig.3 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 05 Cd (pF) 10 20 80 60 20 0 40 15 VR (V) MHC313 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. |
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