BGA2012 datasheet(3/12 Pages) PHILIPS

3 / 12 page

2000 Dec 04

Philips Semiconductors

Product speciﬁcation

1900 MHz high linear low noise ampliﬁer

BGA2012

THERMAL CHARACTERISTICS

CHARACTERISTICS

RF input AC coupled; VS =3V; IS = 7 mA; f = 1900 MHz; Tj =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction

to solder point

Ptot = 135 mW; Ts ≤ 100 °C

350

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply current

7.5

control current

−

0.11

−

RL IN

return losses input

typical application; see Fig.2

−−11

−

high IP3 (see Fig.2; stripline = 0 mm)

−−20

−

high IP3 (see Fig.2; stripline = 0.5 mm)

−−14

−

RL OUT

return losses output

typical application; see Fig.2

−−9

−

high IP3 (see Fig.2; stripline = 0 mm)

−−10

−

high IP3 (see Fig.2; stripline = 0.5 mm)

−−8

−

|s21|2

insertion power gain

typical application (see Fig.2)

−

high IP3 (see Fig.2; stripline = 0 mm)

−

high IP3 (see Fig.2; stripline = 0.5 mm)

−

noise ﬁgure

typical application; see Fig.2; IS =7mA

−

1.7

−

high IP3 (see Fig.2; stripline = 0 mm)

−

2.2

−

high IP3 (see Fig.2; stripline = 0.5 mm)

−

2.3

−

IP3in

input intercept point

typical application; see Fig.2

−−7

−

dBm

high IP3 (see Fig.2; stripline = 0 mm)

−

dBm

high IP3 (see Fig.2; stripline = 0.5 mm)

−

dBm

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