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HVLED001 数据表(PDF) 18 Page - STMicroelectronics |
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HVLED001 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 27 page ![]() Application information HVLED001 18/27 DocID027333 Rev 1 7.2.1 Current sense input The peak of the primary current is read across a shunt resistor placed between the MOSFET's source and compared with a threshold equal to: Equation 1 Where the term VHVSU,pk is the maximum value of the HVSU voltage within around 20 ms and is used to compensate the dependency on the input voltage of the open loop gain transfer function. The gain kp collects all the proportional terms between the HVSU voltage and CS threshold. A leading edge blanking time (LEB) is applied after MOSFET's turn on. The Vcs signal is upper limited to a value that depends on the CTRL voltage and is lower limited to a level defined as: Equation 2 VCS,min = VHVSU • 0.15 A second level OCP threshold is present to temporarily stop the switching activity in case of inductor saturation. 7.2.2 Feedback input The FB pin is intended to be connected directly to the collector of the optocoupler that provides the galvanic insulation to the control loop as well as to act as compensation output for the primary side control (PSR) loop of the output voltage (see Section 7.2.4). A suitable RC network can be placed between FB and ground to compensate the control loop. In case of constant output voltage applications, the PSR loop can be used to regulate the output voltage saving the secondary side error amplifier. The FB voltage is also used as an input parameter for the burst-mode operation described in Section 7.2.5. The pin embeds protection to prevent from the operation with the failed optocoupler and can be pulled to ground to interrupt the switching activity (stop mode). 7.2.3 Zero current detection The zero level detection is performed by a trigger logic that, once armed by a rising voltage, is sensitive to falling edges. The advanced ZCD logic is able to discriminate between the normal operation, output short-circuit or start-up condition. An internal blanking time prevents any triggering signal to activate the MOSFET's at the very beginning of the off time, where spurious resonances could be present. As a result, the first falling edge occurring after the blanking time turns on the MOSFET. To ensure a proper operation, the transformer has to be designed to guarantee that the inductor's demagnetization time is longer than TBLANK (at VTOFF > VTOFF,fix) when the VCS value (Equation 1: ) is higher than 0.3 V (typ.). VCS kp VHVSU VHVSU pk ------------------------------- VFB VFB ref – + |
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