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ESDA14V2BP6 数据表(PDF) 2 Page - STMicroelectronics |
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ESDA14V2BP6 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() ESDA14V2BP6 2/5 Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage tempature coefficient VF Forward voltage drop ELECTRICAL CHARACTERISTICS (Tamb = 25°C) V I VCLVBR VRM IRM IPP Slope: 1/Rd Symbol Parameter Test conditions Value Unit VPP ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ±15 ±8 kV PPP Peak pulse power dissipation(8/20 µs). Note 1 Tj initial = Tamb 50 W Tj Junction temperature 125 °C Tstg Storage temperature range -55to+150 °C TL Maximum lead temperature for soldering during 10s at 5mm for case 260 °C Top Operating temperature range -40to+125 °C Note 1: for a surge greater than the maximum values , the diode will fail in short-circuit. ABSOLUTE RATINGS (Tamb = 25°C) Types IRM @VRM VBR @IR Rd αTC max. min. max. typ. typ. max. µA V V V mA Ω 10 -4/°C pF @ 0V ESDA14V2BP6 112 14.2 18 1 1.5 5.8 25 0.1 3 Symbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 220 °C/W THERMAL RESISTANCES |
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