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HCF4015B 数据表(PDF) 5 Page - STMicroelectronics |
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HCF4015B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() HCF4015B 5/10 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. (1) If more than one unit is cascaded in the parallel clocked application, trCL should be made less than or equal to the sum of the fixed prop- agation delay at 15 pF and the transmission time of the carry output driving stage of the estimated capacitive load. Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. CLOCKED OPERATION tPLH tPHL Propagation Delay Time (carry out or decoded out lines) 5 160 320 ns 10 80 160 15 60 120 tTHL tTLH Transition Time (carry out or decoded out lines) 5 100 200 ns 10 50 100 15 40 80 fCL Maximum Clock Input Frequency 53 6 MHz 10 6 12 15 8.5 17 tW Clock Pulse Width 5 180 90 ns 10 80 40 15 50 25 tr , tf (1) Clock Input Rise or Fall Time 515 µs 10 15 15 15 tsetup Data Setup Time 5 70 35 ns 10 40 20 15 30 15 RESET OPERATION tPLH, tPHL Propagation Delay Time 5 200 400 ns 10 100 200 15 80 160 tW Reset Pulse Width 5 200 100 ns 10 80 40 15 60 30 |
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