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2SD965 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

部件名 2SD965
功能描述  LOW VOLTAGE HIGH CURRENT TRANSISTOR
PDF  4 Pages
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制造商  BILIN [Galaxy Semi-Conductor Holdings Limited]
网页  http://www.galaxycn.com
标志 BILIN - Galaxy Semi-Conductor Holdings Limited

2SD965 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  2SD965 Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited 2SD965 Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited 2SD965 Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited 2SD965 Datasheet HTML 4Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
LOW VOLTAGE HIGH CURRENT TRANSISTOR
2SD965
E032
www.gmicroelec.com
Rev.B
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA ,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA, IC=0
7
V
Collector cut-off current
ICBO
VCB=10V, IE=0
0.1
uA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
uA
Collector-emitter saturation voltage
VCE(sat)
IC/IB=3A/0.1A
1
V
VCE=2V, IC=1mA
200
VCE=2V, IC=0.5A
230
1000
DC current gain(note)
hFE
VCE=2V, IC=0.1A
150
Current gain bandwidth product
fT
VCE=6V,IC=50mA
150
MHz
Output Capacitance
Cob
VCB=20V, f=1MHz ,IE=0A
50
pF
CLASSIFICATION OF hFE2
RANK
Q
R
S
T
RANGE
230-380
340-600
560-800
600-1000



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