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2SC2883 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2883 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page ![]() Production specification NPN Silicon Epitaxial Planar Transistor 2SC2883 E051 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=2V,IC=500mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=0.03A 2.0 V Base-emitter voltage VBE VCE=2V, IB=500mA 1.0 V Transition frequency fT VCE=2V,Ic=500mA 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 40 pF CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 MARKING GO GY TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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