IXFN44N50Q datasheet(1/2 Pages) IXYS

部件名	IXFN44N50Q

功能描述	HiPerFET Power MOSFETs Q-Class

PDF	2 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MW

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

44N50

44

A

48N50

48

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

44N50

176

A

48N50

192

A

I

AR

T

C

= 25

°C48

A

E

AR

T

C

= 25

°C

60

mJ

E

AS

2.5

mJ

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS,

5

V/ns

T

J

£ 150°C, R

G = 2 W

P

D

T

C

= 25

°C

500

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL£ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.5/13

Nm/lb.in.

Weight

30

g

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, High dv/dt

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

500

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2.0

4.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

100

mA

V

GS = 0 V

T

J

= 125

°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

44N50

120

m

W

48N50

100

m

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

HiPerFETTM

Power MOSFETs

Q-Class

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

Features

• IXYS advanced low Q

g process

• Low gate charge and capacitances

- easier to drive

- faster switching

• Unclamped Inductive Switching (UIS)

rated

• Low R

DS (on)

• Fast intrinsic diode

• Internationalstandardpackage

• miniBLOC withAluminiumnitride

isolation for low thermal resistance

• Low terminal inductance (<10 nH) and

stray capacitance to heatsink (<35pf)

• Molding epoxies meet UL 94 V-0

flammability classification

Applications

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

power supplies

• DC choppers

• Temperatureandlightingcontrols

Advantages

• Easy to mount

• Space savings

• High power density

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

V

DSS

I

D25

R

DS(on)

IXFN 44N50Q

500 V 44 A 120 m

W

IXFN 48N50Q

500 V 48 A 100 m

W

t

rr £ 250 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

98715 (03/30/00)

类似零件编号 - IXFN44N50Q

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN44N50Q	572Kb / 4P	HiPerFET Power MOSFETs Q-Class

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IXFN44N50Q 数据表(PDF) 1 Page - IXYS Corporation

IXFN44N50Q 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN44N50Q

类似说明 - IXFN44N50Q

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IXFN44N50Q 数据表(PDF) 1 Page - IXYS Corporation

IXFN44N50Q 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN44N50Q

类似说明 - IXFN44N50Q

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1 2

数据表 下载

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数据表下载