IXFN55N50F datasheet(1/2 Pages) IXYS

部件名	IXFN55N50F

功能描述	HiPerRF Power MOSFETs

PDF	2 Pages

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

500

V

GH(th)

V

DS = VGS, ID = 8 mA

3.0

5.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200 nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

µA

V

GS = 0 V

T

J = 125°C3m A

R

DS(on)

V

GS = 10 V, ID = 0.5

I

D25

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

85

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30V

I

D25

T

C

= 25

°C55

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

220

A

I

AR

T

C

= 25

°C55

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C3.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

J

1.6 mm (0.63 in) from case for 10 s

-

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13Nm/lb.in.

Terminal connection torque

1.5/13Nm/lb.in.

Weight

30g

98854 (8/01)

D

S

G

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Advance Technical Information

IXFN 55N50F

V

DSS

=

500

V

I

D25

=

55

A

R

DS(on) =

85 m

Ω

t

rr ≤

≤≤≤≤ 250 ns

HiPerRFTM

Power MOSFETs

F-Class: MegaHertz Switching

N-Channel Enhancement Mode

Avalanche Rated,

Low Q

g, Low Intrinsic Rg

High dV/dt,

Low t

rr

Features

l RF capable Mosfets

l Ruggedpolysilicongatecellstructure

l Double metal process for low gate

resistance

l UnclampedInductiveSwitching(UIS)

rated

l Low package inductance

- easy to drive and to protect

l Fast intrinsicrectifier

Applications

l DC-DC converters

l Switched-modeandresonant-mode

power supplies, >500kHz switching

l DC choppers

l Pulsegeneration

l Laserdrivers

Advantages

l Easy to mount

l Space savings

l High power density

类似零件编号 - IXFN55N50F

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN55N50	121Kb / 4P	HiPerFET Power MOSFET
IXYS Corporation	IXFN55N50	577Kb / 4P	HiPerFET Power MOSFET
Inchange Semiconductor ...	IXFN55N50	599Kb / 3P	N-Channel MOSFET Transistor

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类似说明 - IXFN55N50F

制造商	部件名	数据表	功能描述
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	IXFH12N100F	112Kb / 2P	HiPerRF Power MOSFETs
	IXFH28N50F	112Kb / 2P	HiPerRF Power MOSFETs
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IXFN55N50F 数据表(PDF) 1 Page - IXYS Corporation

IXFN55N50F 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN55N50F

类似说明 - IXFN55N50F

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IXFN55N50F 数据表(PDF) 1 Page - IXYS Corporation

IXFN55N50F 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN55N50F

类似说明 - IXFN55N50F

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1 2

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数据表下载