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L9638D 数据表(PDF) 5 Page - STMicroelectronics |
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L9638D 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() 5/14 L9638 Note: 1. Room temperature evaluated - no 100% tested 6.3 tWUPgs Remote wake-up delay time Transitioning on WUP 40 100 µs 7 Enable Input EN 7.1 VENLow Low level input voltage 1.5 V 7.2 VENHigh High level input voltage 3.5 V 7.3 REN EN pull down resistor 5 10 25 K Ω 7.4 tgts Go to sleep delay time VEN = VENlow 40 100 µs 7.5 tENgs EN wake-up glitch suppression time VEN = VENhigh 40 100 µs 8 AC Timing Parameters 8.1 D1 Duty Cycle 1 THRec(max) = 0.744 x VSUP; THDom(max) = 0.581 x VSUP; Vsup = 7.0 to 18V; tbit = 50 µs; D1 = tBus_rec(min)/2 x tBit (CBUS; RBUS) 1nF; 1k Ω/6.8nF; 660 Ω/10nF; 500Ω 0.396 8.2 D2 Duty Cycle 2 THRec(min) = 0.284 x VSUP; THDom(min) = 0.422 x VSUP; Vsup = 7.6 to 18V; tbit = 50 µs; D2 = tBus_rec(min)/2 x tBit (CBUS; RBUS) 1nF; 1k Ω/6.8nF; 660 Ω/10nF; 500Ω 0.581 8.3 D3 Duty Cycle 3 THRec(max) = 0.778 x VSUP; THDom(max) = 0.616 x VSUP; Vsup = 7.0 to 18V; tbit = 96 µs; D3 = tBus_rec(min)/2 x tBit (CBUS; RBUS) 1nF; 1k Ω/6.8nF; 660 Ω/10nF; 500Ω 0.417 8.4 D4 Duty Cycle 4 THRec(min) = 0.251 x VSUP; THDom(min) = 0.389 x VSUP; Vsup = 7.6 to 18V; tbit = 96 µs; D4 = tBus_rec(min)/2 x tBit (CBUS; RBUS) 1nF; 1k Ω/6.8nF; 660 Ω/10nF; 500Ω 0.591 9 Fault Conditions 9.1 ILIN_NO_GND LIN current with GND disconnected GND = Vs = 12V 0V< VLIM < 18V (1) -1 1 mA 9.2 ILIN_NO_Vs LIN current with VS grounded V = GND, 0V < VLIN < 18V (1) 100 µA Table 5. Electrical Characteristics (continued) (VS = 6V to 26V; TJ = -40 to 150 °C unless otherwise specified) Item Symbol Parameter Test Condition Min. Typ. Max. Unit |
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