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ADL5902ACPZ-R2 数据表(PDF) 23 Page - Analog Devices

部件名 ADL5902ACPZ-R2
功能描述  50 MHz to 9 GHz 65 dB TruPwr Detector
PDF  29 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL5902ACPZ-R2 数据表(HTML) 23 Page - Analog Devices

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ADL5902
Data Sheet
Rev. B | Page 22 of 28
Figure 48 shows the resulting rise and fall times (signal is pulsed
between off and −10 dBm) with CLPF equal to 10 nF. A 2 kΩ
resistor is placed in series with the VOUT pin, and the capacitance
from this resistor to ground (CFILTER in Figure 47) is varied
up to 1 μF.
1
10
100
1k
10k
100k
1M
0
50
100
150
200
250
300
1
10
100
1k
CFILTER (nF)
RESIDUAL RIPPLE (V p-p)
10% TO 90% RISE TIME (µs)
90% TO 10% FALL TIME (µs)
Figure 48. Residual Ripple, Rise and Fall Times Using an RC Low-Pass Filter
at VOUT, PIN = 0 dBm at 2.14 GHz
For large values of CFILTER, the fall time is dramatically reduced
compared to Figure 46. This comes at the expense of a moderate
increase in rise time.
As CFILTER is reduced, the fall time flattens out. This is because
the fall time is now dominated by the 10 nF CLPF which is
present throughout the measurement.
Table 6 shows recommended minimum values of CLPF for
popular modulation schemes, using just a single filter capacitor
at the CLPF pin. Using lower capacitor values results in rms
measurement errors. Output response time (10% to 90%) is also
shown. If the output noise shown in Table 6 is unacceptably
high, it can be reduced by
Increasing CLPF
Adding an RC filter at VOUT, as shown in Figure 47
Implementing an averaging algorithm after the ADL5902
output voltage is digitized by an ADC
Table 6. Recommended Minimum CLPF Values for Various Modulation Schemes
Modulation/Standard
Peak-Envelope
Power
Signal
Bandwidth
CLPF (min)
Output Noise
Rise/Fall Time (10% to 90%)
W-CDMA, One-Carrier, TM1-64
10.56 dB
3.84 MHz
10 nF
95 mV p-p
12/330
s
W-CDMA Four-Carrier, TM1-64, TM1-32,
TM1-16, TM1-8
12.08 dB
18.84 MHz
5.6 nF
164 mV p-p
7/200
s
LTE, TM1 1CR 20 MHz (2048 Subcarriers,
QPSK Subcarrier Modulation)
11.58 dB
20 MHz
1000 pF
452 mV p-p
1.3/38
s



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