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DSL03 数据表(PDF) 2 Page - STMicroelectronics |
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DSL03 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics DSL03 2/7 DocID022325 Rev 2 1 Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vpp Peak pulse voltage IEC 61000-4-5 contact discharge 30 kV Ipp Peak pulse current 8/20µs 16 A Tstg Tj Storage temperature range Operating junction temperature range -55 to 150 -40 to 125 °C °C TL Maximum temperature for soldering during 10s 260 °C Table 2. Electrical characteristics (Tamb = 25 °C) Order code IRM @ VRM I/O to I/O VBR @ IBR I/O to I/O VCL @ IPP 8/20 µs I/O to I/O C I/O to I/O C I/O to I/O ΔC I/O to I/O Max. µA V Min V mA Max. V A typ. (1) pF max.(1) pF typ.(2) pF DSL03-010SC6 0.2 10 10.5 1 29 16 0.5 3 0.2 DSL03-022SC6 0.2 22 25 1 52 16 0.5 3 0.2 DSL03-024SC6 0.2 24 28 1 55 16 0.5 3 0.2 1. Test conditions: VR = 2 V bias, VRMS = 1 V, F = 1 MHz 2. Measured between 1 V and VRM Figure 2. Peak pulse power dissipation versus initial junction temperature (typical values, 8/20µs) Figure 3. Leakage current versus junction temperature (typical values) 0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150 Ppp (W) 8/20 µs Tj(°C) 1.E+00 1.E+01 1.E+02 1.E+03 25 50 75 100 125 T j(°C) VR=VRM (nA) |
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