STFI15N95K5

Electrical characteristics

DocID029528 Rev 1

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

12

A

Source-drain current

(pulsed)

-

48

A

VSD(1)

Forward on voltage

-

1.5

V

Reverse recovery time

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times")

-

444

ns

Reverse recovery charge

-

7

µC

Reverse recovery current

-

32

A

Reverse recovery time

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times")

-

630

ns

Reverse recovery charge

-

9.2

µC

Reverse recovery current

-

29

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.