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STM32L151C6 数据表(PDF) 55 Page - STMicroelectronics |
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STM32L151C6 数据表(HTML) 55 Page - STMicroelectronics |
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55 / 133 page ![]() DocID17659 Rev 12 55/133 STM32L151x6/8/B STM32L152x6/8/B Electrical characteristics 104 VPVD0 Programmable voltage detector threshold 0 Falling edge 1.8 1.85 1.88 V Rising edge 1.88 1.94 1.99 VPVD1 PVD threshold 1 Falling edge 1.98 2.04 2.09 Rising edge 2.08 2.14 2.18 VPVD2 PVD threshold 2 Falling edge 2.20 2.24 2.28 Rising edge 2.28 2.34 2.38 VPVD3 PVD threshold 3 Falling edge 2.39 2.44 2.48 Rising edge 2.47 2.54 2.58 VPVD4 PVD threshold 4 Falling edge 2.57 2.64 2.69 Rising edge 2.68 2.74 2.79 VPVD5 PVD threshold 5 Falling edge 2.77 2.83 2.88 Rising edge 2.87 2.94 2.99 VPVD6 PVD threshold 6 Falling edge 2.97 3.05 3.09 Rising edge 3.08 3.15 3.20 Vhyst Hysteresis voltage BOR0 threshold - 40 - mV All BOR and PVD thresholds excepting BOR0 -100 - 1. Guaranteed by characterization results. 2. Valid for device version without BOR at power up. Please see option "T" in Ordering information scheme for more details. Table 14. Embedded reset and power control block characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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