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STM32L151VB 数据表(PDF) 92 Page - STMicroelectronics

部件名 STM32L151VB
功能描述  Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
PDF  133 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L151VB 数据表(HTML) 92 Page - STMicroelectronics

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Electrical characteristics
STM32L151x6/8/B STM32L152x6/8/B
92/133
DocID17659 Rev 12
Figure 25. USB timings: definition of data signal rise and fall time
Table 51. USB DC electrical characteristics
Symbol
Parameter
Conditions
Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input levels
VDD
USB operating voltage(2)
2. To be compliant with the USB 2.0 full speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 k
Ω resistor to a 3.0-to-3.6 V voltage range.
-3.0
3.6
V
VDI(3)
3. Guaranteed by characterization results.
Differential input sensitivity
I(USB_DP, USB_DM)
0.2
-
V
VCM(3)
Differential common mode range Includes VDI range
0.8
2.5
VSE(3)
Single ended receiver threshold
-
1.3
2.0
Output levels
VOL(4)
4. Tested in production.
Static output level low
RL of 1.5 kΩ to 3.6 V(5)
5. RL is the load connected on the USB drivers.
-0.3
V
VOH(4)
Static output level high
RL of 15 kΩ to VSS(5)
2.8
3.6
Table 52. USB: full speed electrical characteristics
Driver characteristics(1)
1. Guaranteed by design.
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall Time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS
Output signal crossover voltage
1.3
2.0
V



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