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STM32F411CEU6TR 数据表(PDF) 82 Page - STMicroelectronics

部件名 STM32F411CEU6TR
功能描述  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
PDF  149 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F411CEU6TR 数据表(HTML) 82 Page - STMicroelectronics

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Electrical characteristics
STM32F411xC STM32F411xE
82/149
DocID026289 Rev 6
6.3.8
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 53. However, the recommended clock input
waveform is shown in Figure 22.
The characteristics given in Table 35 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.
Table 34. Low-power mode wakeup timings(1)
Symbol
Parameter
Min(1)
Typ(1)
Max(1)
Unit
tWUSLEEP(2)
Wakeup from Sleep mode
-
4
6
CPU
clock
cycle
tWUSTOP(2)
Wakeup from Stop mode, usage of main regulator
-
13.5
14.5
µs
Wakeup from Stop mode, usage of main regulator, Flash
memory in Deep power down mode
-105
111
Wakeup from Stop mode, regulator in low power mode
-
21
33
Wakeup from Stop mode, regulator in low power mode,
Flash memory in Deep power down mode
-
113
130
tWUSTDBY(2)(3)
Wakeup from Standby mode
-
314
407
µs
tWUFLASH
Wakeup of Flash from Flash_Stop mode
-
-
8
µs
Wakeup of Flash from Flash Deep power down mode
-
-
100
1. Guaranteed by characterization results.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY maximum value is given at –40 °C.
Table 35. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
External user clock source frequency(1)
-
1-
50
MHz
VHSEH
OSC_IN input pin high level voltage
0.7VDD
-VDD
V
VHSEL
OSC_IN input pin low level voltage
VSS
-0.3VDD
tw(HSEH)
tw(HSEL)
OSC_IN high or low time(1)
5-
-
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1)
--
10
Cin(HSE)
OSC_IN input capacitance(1)
--
5
-
pF
DuCy(HSE) Duty cycle
-
45
-
55
%
IL
OSC_IN Input leakage current
VSS ≤VIN ≤VDD
--
±1
µA
1. Guaranteed by design.



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