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STM32F411CEU6U 数据表(PDF) 91 Page - STMicroelectronics |
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STM32F411CEU6U 数据表(HTML) 91 Page - STMicroelectronics |
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91 / 149 page  DocID026289 Rev 6 91/149 STM32F411xC STM32F411xE Electrical characteristics 123 Figure 28 and Figure 29 show the main PLL output clock waveforms in center spread and down spread modes, where: F0 is fPLL_OUT nominal. Tmode is the modulation period. md is the modulation depth. Figure 28. PLL output clock waveforms in center spread mode Figure 29. PLL output clock waveforms in down spread mode 6.3.12 Memory characteristics Flash memory The characteristics are given at TA = - 40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 44. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode, VDD = 1.7 V - 5 - mA Write / Erase 16-bit mode, VDD = 2.1 V - 8 - Write / Erase 32-bit mode, VDD = 3.3 V - 12 - |
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