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STM32F411CEU7 数据表(PDF) 95 Page - STMicroelectronics

部件名 STM32F411CEU7
功能描述  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
PDF  149 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F411CEU7 数据表(HTML) 95 Page - STMicroelectronics

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STM32F411xC STM32F411xE
Electrical characteristics
123
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 49. EMI characteristics for LQFP100
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
8/84 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C, conforming to
IEC61967-2
0.1 to 30 MHz
19
dBµV
30 to 130 MHz
17
130 MHz to 1 GHz
12
SAE EMI Level
3.5
-
Table 50. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to
ANSI/ESD STM5.3.1
UFBGA100,
UFQFPN48
4500
WLCSP49
3
400
LQPF64,
LQFP100
3250
1. Guaranteed by characterization results.



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