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STPS140ZY 数据表(PDF) 2 Page - STMicroelectronics |
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STPS140ZY 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics STPS140Z-Y 2/7 Doc ID 023830 Rev 1 1 Characteristics Table 2. Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF Continuous forward current Tamb = 60 °C 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 5.5 A IRRM Repetitive peak reverse current tp = 2 µs F = 1 kHz square 0.5 A IRSM Non repetitive peak reverse current tp = 100 µs square 1 A Tstg Storage temperature range - 65 to + 150 °C Tj Operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink - 40 to + 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-a) Junction to ambient(1) 1. Mounted on epoxy board. 500 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, < 2% Reverse leakage current Tj = 25 °C VR = 5 V 10 µA Tj = 25 °C VR = 40 V 40 Tj = 100 °C 1.5 5 VF (2) 2. Pulse test: tp = 380 ms, < 2% To evaluate the maximum conduction losses use the following equation: P = 0.2 x IF(AV) + 0.3 x IF 2 (RMS) at Tj = 150 °C Forward voltage drop Tj = 25 °C IF = 1 A 0.55 V Tj = 100 °C 0.45 0.51 dPtot dTj < 1 Rth(j-a) |
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