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STPSC2H12 数据表(PDF) 3 Page - STMicroelectronics |
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STPSC2H12 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STPSC2H12 Characteristics DocID030271 Rev 1 3/10 1.1 Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) Figure 2: Reverse leakage current versus reverse voltage applied (typical values) Figure 3: Peak forward current versus case temperature Figure 4: Junction capacitance versus reverse voltage applied (typical values) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Figure 6: Non- repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF(V) IF(A) T a = 150 °C Pulse test : t p = 500 µs T a = 25 °C 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 VR(V) IR(µA) T j = 25 °C T j = 150 °C 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 TC(°C) IM(A) T δ = tp/T tp δ = 0.1 δ = 0.3 δ = 0.5 δ = 1 δ = 0.7 0 20 40 60 80 100 120 140 160 180 200 0.1 1.0 10.0 100.0 1000.0 10000.0 VR(V) Cj(pF) F = 1 MHz V OSC = 30 mVRMS T j = 25 °C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) Single pulse Zth(j-c) /Rth(j-c) 1.E+01 1.E+02 1.E+03 1.E-05 1.E-04 1.E-03 1.E-02 tp(s) T a = 25 °C T a = 150 °C IFSM(A) |
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