STPSC6H12 datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPSC6H12

2/8

DocID024631 Rev 5

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.89 x IF(AV) + 0.285 x IF

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 125 °C,  = 0.5, DC

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 150 °C

tp = 10 µs square, Tc = 25 °C

100

IFRM

Repetitive peak forward current

 = 0.1, T

c = 125 °C

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range(1)

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

Table 3. Thermal resistance

Symbol

Parameter

Typ.

Max.

Unit

Rth(j-c)

Junction to case

1.3

1.9

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

1. tp = 10 ms,  < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

-100

400

µA

Tj = 150 °C

0.65

1.5

(2)

2. tp = 500 µs,  < 2%

Forward voltage drop

Tj = 25 °C

IF = 6 A

-1.55

1.9

Tj = 150 °C

2.05

2.6

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

1. Most accurate value for the capacitive charge:

Total capacitive charge

VR = 800 V

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

330

VR = 300 V, Tc = 25 °C, F = 1 MHz

dPtot

dTj

Rth(j-a)

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