STPSC30H12C datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STPSC30H12C

2/9

DocID030339 Rev 1

Characteristics

Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

IF(RMS)

Forward rms current

IF(AV)

Average forward current

TC = 150 °C

DC current

Per diode/per device

15/30

TC = 135 °C

DC current

21/42

TC = 25 °C

DC current

38/76

IFRM

Repetitive peak forward

current

TC = 150 °C,Tj = 175 °C,

δ = 0.1

IFSM

Surge non repetitive

forward current

tp = 10 ms

sinusoidal

TC = 25 °C

105

TC = 150 °C

tp = 10 µs

square

TC = 25 °C

630

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 3: Thermal resistance parameters

Symbol

Parameter

Typ.

value

Max.

value

Unit

Rth(j-c)

Junction to case

Per diode

0.50

0.70

°C/W

Per device

0.25

0.35

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

7.5

µA

Tj = 150 °C

600

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 15 A

1.35

1.50

Tj = 150 °C

1.75

2.25

Notes:

(1)Pulse test: tp = 10 ms, δ < 2%

(2)Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.09 x IF(AV) + 0.0775 x IF2(RMS)

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