November 2010

Doc ID 16287 Rev 3

1/8

8

STPSC1006

600 V power Schottky silicon carbide diode

Features

temperature

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

10 A

600 V

175 °C

12 nC

K

A

K

A

NC

TO-220AC

STPSC1006D

STPSC1006G

www.st.com