| 数据搜索系统,热门电子元器件搜索 |
|
STTH8S12 数据表(PDF) 4 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STTH8S12 数据表(HTML) 4 Page - STMicroelectronics |
|
4 / 8 page ![]() Characteristics STTH8S12 4/8 DocID026655 Rev 1 Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 350 400 450 500 QRR(nC) I F = I F(AV) V R = 600 V T j = 125 °C dIF/dt(A/µs) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 300 350 400 450 500 SFACTOR I F=IF(AV) V R=600 V T j=125 °C dIF/dt(A/µs) Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Junction capacitance versus reverse voltage applied (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 I F = I F(AV) V R = 600 V Reference: T j = 125 °C I RM S FACTOR Q RR Tj(°C) C(pF) 1 10 100 1 10 100 1000 10000 F = 1 MHz V OSC = 30 mVRMS T j = 25 °C V R (V) |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |