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STTH8T06 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH8T06
功能描述  Very low switching losses
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH8T06 数据表(HTML) 4 Page - STMicroelectronics

  STTH8T06 Datasheet HTML 1Page - STMicroelectronics STTH8T06 Datasheet HTML 2Page - STMicroelectronics STTH8T06 Datasheet HTML 3Page - STMicroelectronics STTH8T06 Datasheet HTML 4Page - STMicroelectronics STTH8T06 Datasheet HTML 5Page - STMicroelectronics STTH8T06 Datasheet HTML 6Page - STMicroelectronics STTH8T06 Datasheet HTML 7Page - STMicroelectronics STTH8T06 Datasheet HTML 8Page - STMicroelectronics STTH8T06 Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
STTH8T06
4/9
DocID023406 Rev 3
Figure 5. Reverse recovery time versus dIF/dt
(typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
t
RR(ns)
0
10
20
30
40
50
0
100
200
300
400
500
600
700
800
900
1000
VR=400 V
Tj=125 °C
IF=0.5 x IF(AV)
IF=IF(AV)
IF=2 x IF(AV)
dIF/dt(A/µs)
Q
RR(nC)
dIF/dt(A/µs)
0
10
20
30
40
50
60
0
100
200
300
400
500
600
700
800
900
1000
VR=400 V
Tj=125 °C
IF=0.5 x IF(AV)
IF=IF(AV)
IF=2 x IF(AV)
Figure 7. Reverse recovery softness factor
versus dIF/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction temperature
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
500
600
700
800
900
1000
S
FACTOR
IF=IF(AV)
VR=400 V
Tj=125 °C
dIF/dt(A/µs)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
Tj(°C)
IF=IF(AV)
VR=400 V
Reference: Tj=125 °C
SFACTOR
IRM
QRR
Figure 9. Junction capacitance versus reverse
voltage applied (typical values)
Figure 10. Relative variation of non-repetitive
peak surge forward current versus pulse
duration
C(pF)
10
100
1
10
100
1000
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
V
R (V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1.0
10.0
I
(t )/I
(10ms)
FSM
p
FSM
,
t (ms)
p
sinusoidal waveform



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