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STTH15AC06 数据表(PDF) 4 Page - STMicroelectronics |
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STTH15AC06 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH15AC06 4/8 DocID026243 Rev 2 Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) Q (nC) rr 0 200 400 600 800 1000 0 50 100 150 200 250 300 350 400 450 500 I = 15 A F V = 400 V R T = 125 °C j dIF/dt(A/µs) SFACTOR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 I= 15 A F V = 400 V R T = 125 °C j dIF/dt(A/µs) Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 IF=15 A VR=400 V Reference: Tj=125 °C IRM SFACTOR QRR Tj(°C) VFP(V) 0 2 4 6 8 10 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) I= 15 A F T = 125 °C j Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) tfr(ns) 0 50 100 150 200 250 50 100 150 200 250 300 350 400 450 500 IF = 15 A VFR= 1.6 V Tj = 125 °C dIF/dt(A/µs) C(pF) 10 100 1000 1 10 100 1000 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C VR(V) |
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