STTH30R04-Y datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

STTH30R04-Y

2/10

DocID024454 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.95 x IF(AV) + 0.01 x IF

(RMS)

Table 2. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

400

IF(RMS)

RMS forward current

IF(AV)

Average forward current,

δ = 0.5

TO-220AC / DO-247

Tc = 135° C

IFSM

Surge non repetitive forward

current

tp = 10 ms Sinusoidal

280

Tstg

Storage temperature range

-65 to +175

° C

Operating junction temperature range

-40 to +175

° C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC / DO-247

0.8

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 100° C

Tj = 125° C

150

(2)

Forward voltage drop

Tj = 25° C

IF = 15 A

1.35

Tj = 150° C

0.83

1.04

Tj = 25° C

IF = 30 A

1.55

Tj = 100° C

1.32

Tj = 150° C

1.0

1.25

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

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