STTH30ST06-Y datasheet(3/11 Pages) STMICROELECTRONICS

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STTH30ST06-Y

Characteristics

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 30 A, VR = 400 V

dIF/dt = -100 A/µs

45.5

Sfactor

Softness factor

0.3

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -50 A/µs

IF = 0.5 A, Irr = 0.25 A

IR = 1 A

tfr

Forward recovery time

IF = 30 A, VFR = 4 V

dIF/dt = 300 A/µs

200

VFP

Forward recovery voltage

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Forward voltage drop versus forward

current

(W)

F(AV)

100

IF(AV)(A)

d = 1

d = 0.5

d = 0.2

= 0.

d = 0.05

= tp/T

IFM(A)

0.1

1.0

10.0

100.0

1000.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Tj=125°C

(Maximum values)

Tj=125 °C

(Typical values)

Tj=25 °C

(Maximum values)

V FM(V)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 4. Peak reverse recovery current versus

dIF/dt (typical values)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

IRM(A)

100

150

200

250

300

350

400

450

500

IF=IF(AV)

VR=400 V

Tj=125 °C

dIF/dt(A/µs)

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