STTH80S06 datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STTH80S06

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DocID028111 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.43 x IF(AV) + 0.009 x IF

(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 °C to +175 °C

600

IF(RMS)

RMS forward current

113

IF(AV)

Average forward current,

δ = 0.5 square wave T

c = 105 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

400

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

0.3

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-0.2

µA

Tj = 150 °C

0.2

(2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

-1.7

2.2

Tj = 150 °C

1.0

1.3

Tj = 150 °C

IF = 80 A

1.65

2.15

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR = 1 A

IF = 1 A, VR = 30 V,

dIF/dt = -50 A/µs

-55

Tj = 125 °C

IF = 80 A,

dIF/dt = -200 A/µs,

VR = 400 V

-110

IRM

Reverse recovery current

Sfactor

Softness factor

0.4

Qrr

Reverse recovery charges

900

tfr

Forward recovery time

Tj = 25 °C

IF = 80 A,

dIF/dt = 200 A/µs,

VFR = 1.1 x VFmax

800

VFP

Forward recovery voltage

3.6

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