STTH112-Y datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH112-Y

2/7

DocID025888 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.25 x IF(AV) + 0.30 IF2(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

IF(AV)

Average forward current

TL = 135 °C, δ = 0.5

IFSM

Forward Surge current

tp = 8.3 ms

Tstg

Storage temperature range

-65 to + 175

°C

Tj(1)

condition to avoid thermal runaway for a diode on its own heatsink

Operating temperature range

-40 to + 175

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR(1)

1. Pulse test: tp = 5 ms, δ < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

VF(2)

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 1 A

1.9

Tj = 150 °C

1.10

1.55

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Tests conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A

IR = 1 A

tfr

Forward recovery time

Tj = 25 °C

IF = 1 A, dIF/dt = 50 A/µs

VFR = 4.5 V

500

VFP

Forward recovery

voltage

dPtot

dTj

Rth(j-a)

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