ACS302 datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Characteristics

ACS302

4/12

DocID024500 Rev 1

Figure 7. Relative variation of holding current

and latching current (IH, IL) versus junction

temperature (typical values)

Figure 8. Surge peak on-state current versus

number of cycles

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

IH,IL [T j]/ IH,IL [T j=25 °C]

IL, IH

Tj(°C)

100

1000

ITSM

Non repetitive

Tj initial=25 °C

ITRM

Repetitive

Tamb=110°C

ITSM, ITRM (A)

Number of cycles

One cycle

t=20ms

Figure 9. Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10ms, and corresponding value of I2t

Figure 10. On-state characteristics (maximum

values)

100

1000

0.01

0.10

1.00

10.00

ITSM(A), I²t (A²s)

Tj initial=25 °C

ITSM

I²t

dI/dt limitation: 50 A/µs

tp(ms)

0.01

0.10

1.00

10.00

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

ITM(A)

Tj max :

Vto= 0.8 V

Rd= 500 md

Tj=25 °C

Tj=125 °C

VTM(V)

Figure 11. Relative variation of critical rate of

decrease of current (dI/dt)c versus junction

temperature (typical values)

Figure 12. Relative variation of critical rate of

decrease of current (dI/dt)c versus dV/dt

(typical values)

100

110

120

130

(dI/dt)

c [Tj] / (dI/dt) c [Tj=125°C]

Tj(°C)

0.1

1.0

10.0

0.1

1.0

10.0

100.0

(dI/dt)c [(dV/dt) c ] / Specified (dI/dt) c

(dV/dt)c (V/µs)

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