P400 Series

3

Bulletin I2776 rev. E 04/99

www.irf.com

dv/dt

Maximum critical rate of rise of

off-state voltage

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current at V

I

RRM

Max peak reverse leakage current

100

µA

T

50Hz, circuit to base, all terminal shorted,

T

Blocking

Parameter

P400

Units Conditions

200

V/µs

T

J

= 125°C, exponential to 0.67 V

DRM

gate open

10

mA

T

V

INS

RMS isolation voltage

2500

V

P

GM

Maximum peak gate power

8

P

G(AV)

Maximum average gate power

2

I

GM

Maximum peak gate current

2

A

- V

GM

Maximum peak negative

gate voltage

V

GT

Maximum gate voltage required

3

T

J

= - 40°C

to trigger

2

T

J

= 25°C

Anode Supply = 6V resistive load

I

GD

Maximum gate current

90

T

required to trigger

60

mA

T

J

= 25°C

Anode Supply = 6V resistive load

35

T

V

GD

Maximum gate voltage

that will not trigger

I

GD

Maximum gate current

that will not trigger

Parameter

P400

Units Conditions

10

Triggering

W

V

0.2

V

2mA

T

J

Max. operating temperature range

-40 to 125

T

stg

Max. storage temperature range

-40 to 125

R

thJC

Max. thermal resistance,

1.05

K/W

DC operation per junction

junction to case

R

thCS

Max. thermal resistance,

0.10

K/W

Mounting surface, smooth and greased

case to heatsink

T

Mounting torque, base to heatsink

4

Nm

wt

Approximate weight

58 (2.0)

g (oz)

Parameter

P400

Units

Conditions

Thermal and Mechanical Specification

°C

A mounting compound is recommended and the torque

should be checked after a period of 3 hours to allow for the

spread of the compound