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STB6N60M2 数据表(PDF) 7 Page - STMicroelectronics

部件名 STB6N60M2
功能描述  Extremely low gate charge
PDF  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB6N60M2 数据表(HTML) 7 Page - STMicroelectronics

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DocID024772 Rev 3
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STB6N60M2, STD6N60M2
Electrical characteristics
21
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations
Figure 11. Normalized VDS vs temperature
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
VGS
6
4
2
0
0
2
Qg(nC)
(V)
8
4
6
10
VDD = 480V
8
12
ID = 4.5 A
VDS
300
200
100
0
400
500
VDS
(V)
AM15878v1
RDS(on)
1.060
1.040
1.020
0
3
ID(A)
(
Ω)
1
1.080
1.100
2
4
VGS=10V
1.120
AM15879v1
C
100
10
1
0.1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
1000
AM15880v1
VDS
-50
TJ(°C)
(norm)
-25
50
0
25
75
0.93
0.95
0.97
1.03
1.05
1.07
100
0.99
1.01
1.09
1.11
I =1 mA
D
AM15881v1
VGS(th)
0.8
0.7
-50
TJ(°C)
(norm)
-25
0.9
50
0
25
75
100
ID=250 µA
1.1
1.0
AM15882v1
RDS(on)
0.9
0.7
0.5
-25
TJ(°C)
-50
0
1.1
25
50
75
1.3
(norm)
100
1.5
1.7
1.9
2.1
2.3
VGS=10 V
AM15883v1



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